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d a t a sh eet product speci?cation supersedes data of september 1995 file under discrete semiconductors, sc14 1997 oct 29 discrete semiconductors BFG25A/x npn 5 ghz wideband transistor
1997 oct 29 2 philips semiconductors product speci?cation npn 5 ghz wideband transistor BFG25A/x features low current consumption (100 m a to 1 ma) low noise figure gold metallization ensures excellent reliability. applications rf low power amplifiers, such as pocket telephones, paging systems, with signal frequencies up to 2 ghz. description npn silicon wideband transistor in a four-lead dual emitter sot143b plastic package (cross emitter). pinning pin description 1 collector 2 emitter 3 base 4 emitter fig.1 sot143b. marking code: v11. handbook, 2 columns top view msb014 12 3 4 quick reference data symbol parameter conditions min. typ. max. unit v cbo collector-base voltage -- 8v v ceo collector-emitter voltage -- 5v i c collector current (dc) -- 6.5 ma p tot total power dissipation t s 165 c -- 32 mw h fe dc current gain i c = 0.5 ma; v ce =1v 5080200 f t transition frequency i c = 1 ma; v ce =1v; f = 500 mhz; t amb =25 c 3.5 5 - ghz g um maximum unilateral power gain i c = 0.5 ma; v ce =1v; f = 1 ghz; t amb =25 c - 18 - db f noise ?gure i c = 0.5 ma; v ce =1v; f = 1 ghz; g = g opt ; t amb =25 c - 1.8 - db i c = 1 ma; v ce = 1 v; f = 1 ghz; g = g opt ; t amb =25 c - 2 - db
1997 oct 29 3 philips semiconductors product speci?cation npn 5 ghz wideband transistor BFG25A/x limiting values in accordance with the absolute maximum rating system (iec 134). note 1. t s is the temperature at the soldering point of the collector pin. thermal characteristics note 1. t s is the temperature at the soldering point of the collector pin. characteristics t j =25 c unless otherwise speci?ed. note 1. g um is the maximum unilateral power gain, assuming s 12 is zero and symbol parameter conditions min. max. unit v cbo collector-base voltage open emitter - 8v v ceo collector-emitter voltage open base - 5v v ebo emitter-base voltage open collector - 2v i c collector current (dc) - 6.5 ma p tot total power dissipation t s 165 c; note 1 - 32 mw t stg storage temperature - 65 150 c t j junction temperature - 175 c symbol parameter conditions value unit r th j-s thermal resistance from junction to soldering point note 1 320 k/w symbol parameter conditions min. typ. max. unit i cbo collector leakage current i e = 0; v cb =5v -- 50 m a h fe dc current gain i c = 0.5 ma; v ce =1v 5080200 c re feedback capacitance i c =i c = 0; v cb = 1 v; f = 1 mhz - 0.21 0.3 pf f t transition frequency i c = 1 ma; v ce =1v; t amb =25 c; f = 500 mhz 3.5 5 - ghz g um maximum unilateral power gain (note 1) i c = 0.5 ma; v ce =1v; f = 1 ghz; t amb =25 c - 18 - db f noise ?gure i c = 0.5 ma; v ce = 1 v; f = 1 ghz; g = g opt ; t amb =25 c - 1.8 - db i c = 1 ma; v ce = 1 v; f = 1 ghz; g = g opt ; t amb =25 c - 2 - db g um 10 log s 21 2 1 s 11 2 C ? ?? 1 s 22 2 C ? ?? -------------------------------------------------------------- db =
1997 oct 29 4 philips semiconductors product speci?cation npn 5 ghz wideband transistor BFG25A/x fig.2 power derating curve. handbook, halfpage 0 50 100 200 40 30 10 0 20 mrc038 - 1 150 p tot (mw) t s ( o c) fig.3 dc current gain as a function of collector current; typical values. v ce =1v. handbook, halfpage 10 0 mcd138 1 10 1 10 2 10 3 40 100 h fe i (ma) c 20 80 60 fig.4 feedback capacitance as a function of collector-base voltage; typical values. i c =i c = 0; f = 1 mhz. handbook, halfpage 0 0.3 0.2 0.1 0 246 mcd139 c re (pf) v (v) cb fig.5 transition frequency as a function of collector current; typical values. v ce = 1 v; f = 500 mhz; t amb =25 c. handbook, halfpage 0 6 4 2 0 12 4 mcd140 3 i (ma) c (ghz) t f
1997 oct 29 5 philips semiconductors product speci?cation npn 5 ghz wideband transistor BFG25A/x fig.6 gain as a function of collector current; typical values. v ce = 1 v; f = 500 mhz. gum = maximum unilateral power gain; msg = maximum stable gain. handbook, halfpage 30 20 10 0 mcd141 gain (db) i (ma) c 0 1.0 2.5 0.5 1.5 2.0 msg g um fig.7 gain as a function of collector current; typical values. v ce = 1 v; f = 1 ghz. gum = maximum unilateral power gain; msg = maximum stable gain. handbook, halfpage 0 1.0 2.5 20 15 5 0 10 mcd142 0.5 1.5 2.0 gain (db) i (ma) c msg g um fig.8 gain as a function of frequency; typical values. i c = 0.5 ma; v ce =1v. gum = maximum unilateral power gain; msg = maximum stable gain. handbook, halfpage 50 mcd143 10 10 2 10 3 10 4 0 10 20 30 40 gain (db) f (mhz) g um msg fig.9 gain as a function of frequency; typical values. i c = 1 ma; v ce =1v. gum = maximum unilateral power gain; msg = maximum stable gain. handbook, halfpage 50 mcd144 10 10 2 10 3 10 4 0 10 20 30 40 gain (db) f (mhz) g um msg
1997 oct 29 6 philips semiconductors product speci?cation npn 5 ghz wideband transistor BFG25A/x fig.10 minimum noise figure as a function of collector current; typical values. v ce =1v. handbook, halfpage 4 2 1 0 3 mcd145 10 - 1 110 f (db) i c (ma) f = 2 ghz 1 ghz 500 mhz fig.11 minimum noise figure as a function of frequency; typical values. v ce =1v. handbook, halfpage 4 2 1 0 3 mcd146 10 2 10 4 10 3 f (db) f (mhz) i c = 2 ma 1 ma 0.5 ma fig.12 common emitter noise figure circles; typical values. i c = 1 ma; v ce = 1 v; f = 500 mhz; z o =50 w; maximum stable gain = 15.6 db; f min = 1.9 db; g opt = 0.85, 5 ; r n /50 = 2.4. handbook, full pagewidth 0.2 0.5 1 2 5 10 0.2 0.5 1 2 5 10 0 + j ?j f = 1.9 db min stability circle unstable region 12 db opt * mcd147 10 15 2 0.5 0.2 msg 15.6 db 14 db 2.5 db 4 db 6 db
1997 oct 29 7 philips semiconductors product speci?cation npn 5 ghz wideband transistor BFG25A/x fig.13 common emitter noise figure circles; typical values. i c = 1 ma; v ce = 1 v; f = 1000 mhz; z o =50 w; maximum stable gain = 12.4 db; f min = 2 db; g opt = 0.78, 14 ; r n /50 = 2.6. handbook, full pagewidth 0.2 0.5 1 2 5 10 0.2 0.5 1 2 5 10 0 + j ?j * f = 2 db min opt stability circle unstable region mcd148 0.5 1 0.2 10 5 2 msg 12.4 db 11 db 9 db 3 db 6 db 4 db fig.14 common emitter noise figure circles; typical values. i c = 1 ma; v ce = 1 v; f = 2000 mhz; z o =50 w ; maximum stable gain = 8.9 db; f min = 2.4 db; g opt = 0.72, 38 ; r n /50 = 1.9. handbook, full pagewidth 0.2 0.5 1 2 5 10 0.2 0.5 1 2 5 10 0 + j ?j 0.5 1 0.2 10 5 2 mcd149 stability circle unstable region 0 f = 2.4 db min opt * 1 0.2 10 5 2 0.5 msg 9 db 6 db 7.5 db 4 db 6 db 3 db
1997 oct 29 8 philips semiconductors product speci?cation npn 5 ghz wideband transistor BFG25A/x fig.15 common emitter input reflection coefficient (s 11 ); typical values. i c = 1 ma; v ce = 1 v; z o =50 w . handbook, full pagewidth 0.2 0.5 1 2 5 10 0.2 0.5 1 2 5 10 0 + j ?j mcd150 0.5 1 0.2 10 5 2 40 mhz 3 ghz fig.16 common emitter forward transmission coefficient (s 21 ); typical values. i c = 1 ma; v ce =1v. handbook, full pagewidth 135 _ o 180 o 135 o 90 o 45 o 0 o _ 45 o _ 90 o mcd151 40 mhz 5 4 3 2 1 3 ghz
1997 oct 29 9 philips semiconductors product speci?cation npn 5 ghz wideband transistor BFG25A/x fig.17 common emitter reverse transmission coefficient (s 12 ); typical values. handbook, full pagewidth 135 _ o 180 o 135 o 90 o 45 o 0 o _ 45 o _ 90 o mcd153 0.1 0.2 0.3 0.4 0.5 40 mhz 3 ghz i c = 1 ma; v ce =1v. fig.18 common emitter output reflection coefficient (s 22 ); typical values. i c = 1 ma; v ce = 1 v; z o =50 w . handbook, full pagewidth 0.2 0.5 1 2 5 10 0.2 0.5 1 2 5 10 0 + j ?j 3 ghz mcd152 0.5 1 0.2 10 5 2 40 mhz
1997 oct 29 10 philips semiconductors product speci?cation npn 5 ghz wideband transistor BFG25A/x package outline unit a references outline version european projection issue date iec jedec eiaj mm 1.1 0.9 a 1 max 0.1 b 1 0.88 0.78 c 0.15 0.09 d 3.0 2.8 e 1.4 1.2 h e y w v q 2.5 2.1 0.45 0.15 0.55 0.45 e 1.9 e 1 1.7 l p 0.1 0.1 0.2 b p 0.48 0.38 dimensions (mm are the original dimensions) sot143b 97-02-28 0 1 2 mm scale plastic surface mounted package; 4 leads sot143b d h e e a b v m a x a a 1 l p q detail x c y w m e 1 e b 2 1 3 4 b 1 b p
1997 oct 29 11 philips semiconductors product speci?cation npn 5 ghz wideband transistor BFG25A/x definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.
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